? 2009 ixys corporation, all rights reserved ds100149(04/09) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 5 a t j = 125 c 50 a r ds(on) v gs = 10v, i d = 8a, note 1 420 m polarhv tm power mosfet (electrically isolated tab) n-channel enhancement mode avalanche rated fast intrinsic diode IXTP16N50PM symbol test conditions maximum ratings v dss t j = 25c to 150c 500 v v dgr t j = 25c to 150c, r gs = 1 m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 7.5 a i dm t c = 25 c, pulse width limited by t jm 35 a i a t c = 25 c 16 a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss , t j = 150 c 10 v/ns p d t c = 25 c 75 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 2.5 g features plastic overmolded tab for electrical isolation international standard package avalanche rated fast intrinsic diode low package inductance advantages high power density easy to mount space savings applications switched-mode and resonant-mode power supplies dc-dc converters laser drivers ac and dc motor drives robotics and servo controls v dss = 500v i d25 = 7.5a r ds(on) 420m g = gate d = drain s = source overmolded (ixtp...m) outline g d s isolated tab advance technical information
IXTP16N50PM ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 8a, note 1 9 16 s c iss 2480 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 237 pf c rss 18 pf t d(on) 24 ns t r 28 ns t d(off) 70 ns t f 25 ns q g(on) 43 nc q gs v gs = 10v, v ds = 0.5 v dss , i d = 8a 15 nc q gd 12 nc r thjc 1.66 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 16 a i sm repetitive, pulse width limited by t jm 64 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 400 ns notes:1. pulse test, t 300 s; duty cycle, d 2 %. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 12 3 isolated to-220 (i xtp...m ) i f = 16a, -di/dt = 100a/ s, v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 v dss , i d = 8a r g = 10 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2009 ixys corporation, all rights reserved IXTP16N50PM fig. 5. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 0123456789 v ds - volts i d - amperes v gs = 10v 8v 6v 7v fig. 2. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. r ds(on) normalized to i d = 8a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 16a i d = 8a fig. 4. r ds(on) normalized to i d = 8a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 2 4 6 8 101214161820 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 2 4 6 8 10 12 14 16 18 20 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 v gs - volts i d - amperes t j = 125oc 25oc - 40oc
IXTP16N50PM ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: f_16n50p(5j)4-30-09-c fig. 7. transconductance 0 4 8 12 16 20 24 28 0 2 4 6 8 101214161820 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.30.40.50.60.70.80.9 1 1.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 250v i d = 8a i g = 10ma fig. 10. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area 0.1 1.0 10.0 100.0 10 100 1000 v ds - volts i d - amperes 25s 1ms 100s r ds(on) limit 10ms dc t j = 150oc t c = 25oc single pulse fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
|
